Title: | Enhanced Selectivity in Volatile Organic Compound Gas Sensors Based on ReS(2)-FETs under Light-Assisted and Gate-Bias Tunable Operation |
Author(s): | Zulkefli A; Mukherjee B; Sahara R; Hayakawa R; Iwasaki T; Wakayama Y; Nakaharai S; |
Address: | "International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan. Department of Chemistry and Biochemistry, Graduate School of Engineering, Kyushu University, 744 Moto-oka, Nishi-ku, Fukuoka 819-0395, Japan. Research Center for Structural Materials, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan" |
Journal Title: | ACS Appl Mater Interfaces |
ISSN/ISBN: | 1944-8252 (Electronic) 1944-8244 (Linking) |
Abstract: | "Using a single-device two-dimensional (2D) rhenium disulfide (ReS(2)) field-effect transistor (FET) with enhanced gas species selectivity by light illumination, we reported a selective and sensitive detection of volatile organic compound (VOC) gases. 2D materials have the advantage of a high surface-area-to-volume ratio for high sensitivity to molecules attached to the surface and tunable carrier concentration through field-effect control from the back-gate of the channel, while keeping the top surface open to the air for chemical sensing. In addition to these advantages, ReS(2) has a direct band gap also in multilayer cases, which sets it apart from other transition-metal dichalcogenides (TMDCs). We take advantage of the effective response of ReS(2) to light illumination to improve the selectivity and gas-sensing efficiency of a ReS(2)-FET device. We found that light illumination modulates the drain current response in a ReS(2)-FET to adsorbed molecules, and the sensing activity differs depending on the gas species used, such as acetone, ethanol, and methanol. Furthermore, wavelength and carrier density rely on certain variations in light-modulated sensing behaviors for each chemical. The device will distinguish the gas concentration in a mixture of VOCs using the differences induced by light illumination, enhancing the selectivity of the sensor device. Our results shed new light on the sensing technologies for realizing a large-scale sensor network in the Internet-of-Things era" |
Keywords: | VOC gases back-gate direct band gap gas sensor internet-of-things light illumination single-device ReS2-FET; |
Notes: | "PubMed-not-MEDLINEZulkefli, Amir Mukherjee, Bablu Sahara, Ryoji Hayakawa, Ryoma Iwasaki, Takuya Wakayama, Yutaka Nakaharai, Shu eng 2021/09/01 ACS Appl Mater Interfaces. 2021 Sep 15; 13(36):43030-43038. doi: 10.1021/acsami.1c10054. Epub 2021 Aug 31" |