| Title: | Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes |
| Author(s): | Zhang X; Chen Z; Chang H; Yan J; Yang S; Wang J; Gao P; Wei T; |
| Address: | "State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science. Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences. Electron Microscopy Laboratory, School of Physics, Peking University; p-gao@pku.edu.cn. State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science; tbwei@semi.ac.cn" |
| ISSN/ISBN: | 1940-087X (Electronic) 1940-087X (Linking) |
| Abstract: | "This protocol demonstrates a method for graphene-assisted quick growth and coalescence of AlN on nano-pattened sapphire substrate (NPSS). Graphene layers are directly grown on NPSS using catalyst-free atmospheric-pressure chemical vapor deposition (APCVD). By applying nitrogen reactive ion etching (RIE) plasma treatment, defects are introduced into the graphene film to enhance chemical reactivity. During metal-organic chemical vapor deposition (MOCVD) growth of AlN, this N-plasma treated graphene buffer enables AlN quick growth, and coalescence on NPSS is confirmed by cross-sectional scanning electron microscopy (SEM). The high quality of AlN on graphene-NPSS is then evaluated by X-ray rocking curves (XRCs) with narrow (0002) and (10-12) full width at half-maximum (FWHM) as 267.2 arcsec and 503.4 arcsec, respectively. Compared to bare NPSS, AlN growth on graphene-NPSS shows significant reduction of residual stress from 0.87 GPa to 0.25 Gpa, based on Raman measurements. Followed by AlGaN multiple quantum wells (MQWS) growth on graphene-NPSS, AlGaN-based deep ultraviolet light-emitting-diodes (DUV LEDs) are fabricated. The fabricated DUV-LEDs also demonstrate obvious, enhanced luminescence performance. This work provides a new solution for the growth of high quality AlN and fabrication of high performance DUV-LEDs using a shorter process and less costs" |
| Keywords: | Aluminum Compounds/chemistry Aluminum Oxide/*chemistry Catalysis Gallium/chemistry Gases/chemistry Graphite/*chemistry Luminescence Nanostructures/*chemistry *Semiconductors *Ultraviolet Rays Volatilization; |
| Notes: | "MedlineZhang, Xiang Chen, Zhaolong Chang, Hongliang Yan, Jianchang Yang, Shenyuan Wang, Junxi Gao, Peng Wei, Tongbo eng Research Support, Non-U.S. Gov't Video-Audio Media 2020/07/14 J Vis Exp. 2020 Jun 25; (160). doi: 10.3791/60167" |
