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Dalton Trans

Title:		"Sc2O3, Er2O3, and Y2O3 thin films by MOCVD from volatile guanidinate class of rare-earth precursors"
Author(s):		Milanov AP; Xu K; Cwik S; Parala H; de los Arcos T; Becker HW; Rogalla D; Cross R; Paul S; Devi A;
Address:		"Inorganic Materials Chemistry, Ruhr-University Bochum, Germany"
Journal Title:		Dalton Trans
Year:		2012
Volume:		20121001
Issue:		45
Page Number:		13936 - 13947
DOI:		10.1039/c2dt31219k
ISSN/ISBN:		1477-9234 (Electronic) 1477-9226 (Linking)
Abstract:		"Alternative novel precursor chemistries for the vapor phase deposition of rare-earth (RE) oxide thin films were developed by synthesising the homoleptic guanidinate compounds tris(N,N'-diisopropyl-2-dimethylamidoguanidinato)-scandium(III) [Sc(DPDMG)(3)] (1), tris(N,N'-diisopropyl-2-dimethylamidoguanidinato)-erbium(III), [Er(DPDMG)(3)] (2) and tris(N,N'-diisopropyl-2-dimethylamidoguanidinato)-yttrium(III), [Y(DPDMG)(3)] (3). All three compounds are monomeric as revealed by single crystal X-ray diffraction (XRD) analysis, nuclear magnetic resonance (NMR) and electron impact mass spectrometry (EI-MS). The thermal analysis revealed that the compounds are volatile and very stable under evaporation conditions. Therefore the complexes were evaluated as precursors for the growth of Sc(2)O(3), Er(2)O(3) and Y(2)O(3) thin films, respectively, by metal-organic chemical vapor deposition (MOCVD). Uniform Sc(2)O(3), Er(2)O(3) and Y(2)O(3) films on Si(100) substrates with reproducible quality were grown by MOCVD by the combination of the respective guanidinate precursors and oxygen in the temperature range 350-700 degrees C. The structural, morphological, compositional and electrical properties of the films were investigated in detail. The most relevant film properties are highlighted in relation to the distinct advantages of the novel precursor chemistries in comparison to the commonly used literature known RE precursors. This study shows that compounds 1-3 are very good precursors for MOCVD yielding Sc(2)O(3), Er(2)O(3) and Y(2)O(3) thin films which are stoichiometric and display suitable electrical properties for their potential use as high dielectric constant (high-k) materials"
Keywords:
Notes:		"PubMed-not-MEDLINEMilanov, Andrian P Xu, Ke Cwik, Stefan Parala, Harish de los Arcos, Teresa Becker, Hans-Werner Rogalla, Detlef Cross, Richard Paul, Shashi Devi, Anjana eng England 2012/10/02 Dalton Trans. 2012 Dec 7; 41(45):13936-47. doi: 10.1039/c2dt31219k. Epub 2012 Oct 1"