| Title: | Electronic sensitization enhanced p-type ammonia gas sensing of zinc doped MoS(2)/RGO composites |
| Author(s): | Linto Sibi SP; Rajkumar M; Govindharaj K; Mobika J; Nithya Priya V; Rajendra Kumar RT; |
| Address: | "Department of Physics, PSG College of Arts and Science, Coimbatore, 641014, Tamil Nadu, India. Department of Physics, PSG College of Arts and Science, Coimbatore, 641014, Tamil Nadu, India. Electronic address: vmanirajkumar@gmail.com. Advanced Materials and Devices Laboratory (AMDL), Department of Nanoscience and Technology, Bharathiar University, Coimbatore, 641046, Tamil Nadu, India. Department of Physics, Nandha Engineering College, Erode, Tamil Nadu, 638052, India" |
| DOI: | 10.1016/j.aca.2023.340932 |
| ISSN/ISBN: | 1873-4324 (Electronic) 0003-2670 (Linking) |
| Abstract: | "Zinc (Zn) doping induced synergetic effects of defects engineering and heterojunction in Molybdenum disulphide/Reduced graphene oxide (MoS(2)/RGO) effectively enhances the p-type Volatile organic compounds (VOC) gas sensing traits and helps in tailoring the over dependence on noble metals for surface sensitization. Through this work, we have successfully prepared Zn doped MoS(2) grafted on RGO employing an in-situ hydrothermal method. Optimal doping concentration of Zn dopants in the MoS(2) lattice triggered more active sites on the basal plane of MoS(2) with the aid of defects promoted by the zinc dopants. Effective intercalation of RGO further boost up the exposed surface area of Zn doped MoS(2) for further interaction of ammonia gas molecules. Besides, smaller crystallite size brought out by 5% Zn dopants aids in efficient charge transfer across the heterojunctions that further amplifies the ammonia sensing traits with a peak response of 32.40% along with a response time of 21.3 s and recovery time of 44.90 s. The as prepared ammonia gas sensor exhibited excellent selectivity and repeatability. The obtained results reveal that transition metal doping into the host lattice proves to be a promising approach for VOC sensing characteristics of p-type gas sensors and gives insight about the importance of dopants and defects for the development of highly efficient gas sensors in the future" |
| Keywords: | Defect engineering Heterojunction Rgo Voc Zinc doped MoS(2) p-type ammonia gas sensor; |
| Notes: | "PubMed-not-MEDLINELinto Sibi, S P Rajkumar, M Govindharaj, Kamaraj Mobika, J Nithya Priya, V Rajendra Kumar, R T eng Netherlands 2023/02/23 Anal Chim Acta. 2023 Apr 1; 1248:340932. doi: 10.1016/j.aca.2023.340932. Epub 2023 Feb 2" |
