| Title: | Wide Band-Gap Bismuth-based p-Dopants for Opto-Electronic Applications |
| Author(s): | Pecqueur S; Maltenberger A; Petrukhina MA; Halik M; Jaeger A; Pentlehner D; Schmid G; |
| Address: | "Siemens AG-Corporate Technology, Guenther-Scharowsky-Strasse 1, 91058, Erlangen, Germany. Organic Materials and Devices, University Erlangen-Nuremberg, Martensstrasse 7, 91058, Erlangen, Germany. Institute of Electronic Microelectronics and Nanotechnology, Av. Poincare, 59652, Villeneuve d'Ascq, France. Department of Chemistry, University at Albany, 1400 Washington Avenue, Albany, NY, 12222, USA. Osram OLED GmbH, Wernerwerkstrasse 2, 93049, Regensburg, Germany. University of Applied Science at Esslingen, Flandernstrasse 101, 73732, Esslingen, Germany. Siemens AG-Corporate Technology, Guenther-Scharowsky-Strasse 1, 91058, Erlangen, Germany. guenter.schmid@siemens.com" |
| ISSN/ISBN: | 1521-3773 (Electronic) 1433-7851 (Linking) |
| Abstract: | "Ten new efficient p-dopants for conductivity doping of organic semiconductors for OLEDs are identified. The key advantage of the electrophilic tris(carboxylato) bismuth(III) compounds is the unique low absorption of the resulting doped layers which promotes the efficiency of OLED devices. The combination of these features with their low fabrication cost, volatility, and stability, make these materials very attractive as dopants in organic electronics" |
| Keywords: | OLEDs bismuth donor-acceptor systems doping organic electronics; |
| Notes: | "PubMed-not-MEDLINEPecqueur, Sebastien Maltenberger, Anna Petrukhina, Marina A Halik, Marcus Jaeger, Arndt Pentlehner, Dominik Schmid, Gunter eng Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S. Germany 2016/07/22 Angew Chem Int Ed Engl. 2016 Aug 22; 55(35):10493-7. doi: 10.1002/anie.201601926. Epub 2016 Jul 21" |
